Silicon vacancy in SiC: A high-spin state defect

Silicon vacancy in SiC: A high-spin state defect

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The carbon vacancy related EI4 defect in 4H-SiC

Electron paramagnetic resonance (EPR) was used to study high-purity semi-insulating 4H-SiC irradiated with 2 MeV electrons at room temperature. The EPR signal of the EI4 defect was found to be dominating in samples irradiated and annealed at ~750°C. Additional large-splitting Si hyperfine (hf) lines and also other C and Si hf structures were observed. Based on the observed hf structures and ann...

Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit

Room temperature coherent spin alignment of silicon vacancies in 4H- and 6H-SiC.

We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies (V(Si)) in silicon carbide (SiC) at room temperature. The data show that the probed silicon vacancy spin ensemble can be prepared in a coherent superposition of the spin states. Rabi nutations persist for more than 80 μs. Two opposite schemes of the optical alignment...

Coherent control of the silicon-vacancy spin in diamond

Spin impurities in diamond have emerged as a promising building block in a wide range of solid-state-based quantum technologies. The negatively charged silicon-vacancy centre combines the advantages of its high-quality photonic properties with a ground-state electronic spin, which can be read out optically. However, for this spin to be operational as a quantum bit, full quantum control is essen...